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PD - 94230
SMPS MOSFET
IRFP23N50L
HEXFET(R) Power MOSFET
Applications VDSS RDS(on) typ. l Switch Mode Power Supply (SMPS) 500V 0.190 l UninterruptIble Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Enhanced Body Diode dv/dt Capability Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torqe, 6-32 or M3 screw
Trr typ. ID
170ns 23A
TO-247AC
Max.
23 15 92 370 2.9 30 14 -55 to + 150 300
Units
A W W/C V V/ns
C 10 lbf*in (1.1N*m)
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr IRRM ton l
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units Conditions D --- --- 23 MOSFET symbol showing the A G --- --- 92 integral reverse S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 14A, VGS = 0V --- 170 250 TJ = 25C IF = 23A ns --- 220 330 TJ = 125C di/dt = 100A/s --- 560 840 nC TJ = 25C --- 980 1500 nC TJ = 125C --- 7.6 11 A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
Bridge Converters
l
All Zero Voltage Switching
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11/28/01
IRFP23N50L
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, ID = 250A --- 0.27 --- V/C Reference to 25C, ID = 1mA --- 0.190 0.235 VGS = 10V, ID = 14A 3.0 --- 5.0 V VDS = V GS, ID = 250A --- --- 50 VDS = 500V, VGS = 0V A --- --- 2 VDS = 400V, VGS = 0V, TJ = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Min. 12 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 26 94 53 45 3600 380 37 4800 100 220 Max. Units Conditions --- S VDS = 50V, ID = 14A 150 ID = 23A 44 nC VDS = 400V 72 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 23A ns --- RG = 6.0 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
410 23 37
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA Notes:
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.24 ---
Max.
0.34 --- 40
Units
C/W
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = 1.5mH, RG = 25,
IAS = 23A, dv/dt = 14V/ns (See Figure 12a)
ISD 23A, di/dt 430A/s, VDD V(BR)DSS,
TJ 150C
2
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IRFP23N50L
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
1
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
0.1
1
4.5V 20s PULSE WIDTH Tj = 150C
0.01
4.5V 20s PULSE WIDTH Tj = 25C
0.001 0.1 1 10 100
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I D = 23A
ID, Drain-to-Source Current ( )
2.5
T J = 25C
R DS(on) , Drain-to-Source On Resistance
2.0
100.00
T J = 150C
10.00
(Normalized)
1.5
1.0
1.00 1.0 6.0
VDS = 15V 20s PULSE WIDTH
11.0 16.0
0.5
0.0 -60 -40 -20 0 20 40 60 80
V GS = 10V
100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFP23N50L
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
12
ID = 23
10
10000
V DS = 400V V DS = 250V V DS = 100V
C, Capacitance(pF)
Ciss
1000
VGS, Gate-to-Source Voltage (V)
7
5
Coss
100
2
Crss
10 1 10 100 1000
0 0 24 48 72 96 120
VDS , Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100.00
1000
OPERATION IN THIS AREA LIMITED BY R
DS(on)
ISD, Reverse Drain Current (A)
10.00
I D , Drain Current (A)
TJ = 150C
100
10us 100us
T J = 25C 1.00
10
1ms
VGS = 0V 0.10 0.0 0.5 1.0 1.5 2.0 VSD , Source-toDrain Voltage (V)
1
TC = 25 C TJ = 150 C Single Pulse
10 100
10ms
1000 10000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFP23N50L
25
VDS VGS
RD
20
D.U.T.
+
RG
-VDD
ID , Drain Current (A)
15
10V
Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
(Z thJC)
1
D = 0.50
Thermal Response
0.1
0.20 0.10 0.05 0.02 0.01
0.01
SINGLE PULSE (THERMAL RESPONSE)
0.001 0.00001
Notes: 1. Duty factor D = 2. Peak T
J
P DM t1 t2 +TC 1
t1/ t 2
= P DM x Z thJC 0.1
0.0001
0.001
0.01
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP23N50L
750
VGS(th) Gate threshold Voltage (V)
600
ID TOP 10A 15A 23A BOTTOM
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0
EAS , Single Pulse Avalanche Energy (mJ)
ID = 250A
450
300
150
0 25 50 75 100 125 150
-75
-50
-25
0
25
50
75
100 125 150
Starting T , Junction Temperature J
( C)
T J , Temperature ( C )
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
Fig 14. Threshold Voltage Vs. Temperature
1 5V
V (B R )D SS
VDS L
D R IV E R
tp
RG
20V tp
D .U .T
IA S
+ - VD D
A
0 .0 1
IAS
Fig 12c. Unclamped Inductive Test Circuit
Current Regulator Same Type as D.U.T.
Fig 12d. Unclamped Inductive Waveforms
50K 12V .2F .3F
QG
VGS V
D.U.T. + V - DS
QGS VG
QGD
VGS
3mA
IG
ID
Current Sampling Resistors
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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IRFP23N50L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRFP23N50L
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
3 .65 (.1 43 ) 3 .55 (.1 40 ) 0.25 (.0 1 0) M -A5 .50 (. 217 ) 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2 3 -C14 .8 0 (.5 83 ) 14 .2 0 (.5 59 ) 4.3 0 (.1 70) 3.7 0 (.1 45)
LE AD A S SIG N MEN TS 1 2 3 4 GA TE DR AIN SO UR C E DR AIN
-DDBM 5 .3 0 (.2 09 ) 4 .7 0 (.1 85 ) 2 .5 0 (.08 9) 1 .5 0 (.05 9) 4
15 .90 (.6 26 ) 15 .30 (.6 02 ) -B-
2X
5.5 0 (.2 17) 4.5 0 (.1 77)
NO TES : 1 D IME N SION ING & TO LE R AN CING P E R A NS I Y14.5M, 1982. 2 C ON TR OLLIN G D IME N SIO N : IN CH . 3 C ON F OR MS TO JED E C OU TLIN E T O-247-A C .
2 .40 (. 094 ) 2 .00 (. 079 ) 2X 5.45 (.21 5) 2X
1 .40 (.0 56 ) 3X 1 .00 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .40 (.13 3) 3 .00 (.11 8) C AS
0 .80 (.03 1) 3 X 0 .40 (.01 6) 2 .60 (.1 0 2) 2 .20 (.0 8 7)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H"
PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/01
8
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